Différences

Ci-dessous, les différences entre deux révisions de la page.

--- doc:transistors [2022/07/31 20:11] – cgay
+++ doc:transistors [2022/09/01 15:18] (Version actuelle) – cgay
@@ Ligne 1: / Ligne 1: @@
 ====== Transistors etc ======
+===== Triacs =====
+wikipedia :
+[[https://fr.wikipedia.org/wiki/Triac|triac(fr)]] -
+[[https://en.wikipedia.org/wiki/TRIAC|triac(en)]]
+BTA12 and BTB12 series. Exemple BT A 12 - 600 BW RG.
+A = insulated. B = non insulated.
+= 12A
+= 600V
+= 800V
+Sensitivity and type.
+B = 50mA Standard.
+C = 25mA Standard.
+SW = 10mA Logic Level.
+BW = 50mA Snubberless.
+CW = 35mA Snubberless.
+TW = 5mA Logic Level.
+Packing mode
+RG = Tube
+Available either in through-hole or surface mount packages, the BTA12, BTB12 and
+T12xx Triac series are suitable for general purpose mains power AC switching. They
+can be used as ON/OFF function in applications such as static relays, heating
+regulation or induction motor starting circuit. They are also recommended for phase
+control operations in light dimmers and appliance motors speed controllers.
+The Snubberless™ versions (W suffix and T12xx) are especially recommended for
+use on inductive loads, because of their high commutation performance. By using an
+internal ceramic pad, the Snubberless™ series provide an insulated tab (rated at
+V RMS ) complying with UL standards (file reference: E81734).
+Logic Level BTA12-600TW and BTA12-600SW offer low holding current, ideal to
+design light dimmers for LED lamps.
+Triacs chez :
+[[https://fr.rs-online.com/web/c/semi-conducteurs/composants-discrets/triac/?pn=1&rpp=50|radiospares]] -
+[[https://www.mouser.fr/c/semiconductors/discrete-semiconductors/thyristors/triacs/?q=btb12|Mouser]]
 ===== IGBT (e.g. plaques à induction) =====
-mai 2022 plaque à induction de Colline Henry transistor IGBT = H20R1203 tension élevée : 1200V 20A !
+Documentation :
+[[http://steph.web.pagesperso-orange.fr/elec/actifs/igbt.htm|stephweb]] -
+[[https://fr.wikipedia.org/wiki/Transistor_bipolaire_%C3%A0_grille_isol%C3%A9e|wkp fr]] -
+[[https://en.wikipedia.org/wiki/Insulated-gate_bipolar_transistor|wkp en]]
+mai 2022 plaque à induction de Colline Henry transistor IGBT = H20R1203 tension élevée : 1200V 20A !\\
+marquage IHW20R120R3, racine du nom 20R120R donc [[http://pdf.datasheetcatalog.com/datasheet/fairchild/SGH20N120RUFD.pdf|SGH20N120RUFDTU]] chez Fairchild\\
+Ceci semble a priori équivalent : [[https://fr.rs-online.com/web/p/igbt/8080231|chez IXYS : IXA12IF1200PB vendu par RS]]\\
+(IXYS aussi a des références qui commencent par "I" comme Infineon et International Rectifier).\\
+Laurent : IXYS est une marque que je fuis. D'expérience j'ai l'impression que la qualité est moindre que chez ST, IR, Infineon ou d'autres vieilles marques comme Fairchild.
+[[https://fr.rs-online.com/web/p/igbt/2266077|IHW30N120R5 de Infineon, marqué H30MR5, chez RS]] et [[https://docs.rs-online.com/f61a/A700000008025591.pdf|datasheet]] : pas mieux, dixit Laurent. Commandé (x30) le 1er septembre 2022.
 RAM : un IGBT 17A parmi un [[https://www.vdram.com/assortiments-de-composants/1873-assortiment-de-mosfets.html|assortiment]] de Mosfets.